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| NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: D DC Current Gain Specified to 10A D High Current Gain-Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39C/W Electrical Characteristics: (TC =+25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 ICEO ICEX VCE = 30V, IB = 0 VCE = 70V, VBE(off) = 1.5V VCE = 70V, VBE(off) = 1.5V, TC = +150C ICBO Emitter Cutoff Current IEBO VCB = 70V, IE = 0 VCB = 70V, IE = 0, TC = +150C VBE = 5V, IC = 0 60 - - - - - - - - - - - - - - 700 1.0 5.0 1.0 10 5.0 V A mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC =+25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Base-Emitter ON Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Current Gain-Bandwidth Product fT IC = 500mA, VCE = 10V, f = 1MHz 2.0 - - MHz hFE VBE(on) VCE(sat) IC = 4A, VCE = 4V IC = 10A, VCE = 4V IC = 4A, VCE = 4V IC = 4A, IB = 400mA IC = 10A, IB = 3.3A 20 5.0 - - - - - - - - 100 - 1.8 1.1 8.0 V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. .530 (13.4) Max .143 (3.65) Dia Thru .668 (17.0) Max E B .655 (16.6) Max .166 (4.23) C (Heat Sink Area) Heat Sink Contact Area (Bottom) .150 (3.82) Max |
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